Irfc430 datasheet
WebIRF530 Datasheet, PDF : Search Partnumber : Match&Start with "IRF530"-Total : 93 ( 1/5 Page) Manufacturer: Part No. Datasheet: Description: Motorola, Inc: IRF530: 157Kb / 2P: N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR ON Semiconductor: IRF530: 192Kb / 7P: http://njsemi.com/datasheets/IRF430%20-%20IRF433.pdf
Irfc430 datasheet
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Web全球领先的电子元器件市场. 首页; ic; 非ic; 电子资讯; 技术资料; 人才招聘; ic厂商:ir WebMaximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage Vds : 500 V Maximum Gate-Source Voltage Vgs : 20 V Maximum Gate-Threshold Voltage Vgs (th) : 4 V Maximum Drain Current Id : 13 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 120 (max) nC Rise Time (tr): 50 (max) nS
WebIRF430 JANTX2N6762 JANTXV2N6762 1 2024-07-08 Product Summary Part Number BVDSS ID IRF430 500V 4.5A RDS(on) 1.5 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Description For footnotes refer to the page 2. International Rectifier HiRel Products, Inc. 500V, N-CHANNEL REF: MIL-PRF … WebApr 11, 2024 · Olá a Todos! No post de hoje, montaremos um amplificador de potência, que entrega 300W RMS por canal, com uma fonte simétrica de 60Vcc e 8A, utiliza apenas quatro transistores de potência na saída, dois NPN MJL3281A e dois PNP MJL1302A, e entrega garantido uma boa qualidade de som! O circuito tem uma simplicidade moderada, com …
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WebN-CHANNEL POWER MOSFET, 5N90G-T2Q-T 数据表, 5N90G-T2Q-T 電路, 5N90G-T2Q-T data sheet : UTC, alldatasheet, 数据表, 电子元件和半导体, 集成电路, 二极管, 三端双向可控硅 和其他半导体的 ponthir village hall facebookWebNov 13, 2024 · IRFC430 Vishay Siliconix,IRFC430 Datasheet.Description:MOSFET N-CH 500V TO PKG,IRFC430 PCB Footprint and Symbol. ... IRFC430 Worldway Part: IRFC430-4384275 Manufacturer: Vishay Siliconix Category: Electronic Components ICs Applications: Industrial Power delivery Enterprise systems Enterprise projectors Personal electronics … shap annandale and eskdaleWeb2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET, IRFF430 Datasheet, IRFF430 circuit, … shapa reviewsWebIRF440 Datasheet (PDF) PD - 90372AREPETITIVE AVALANCHE AND dv/dt RATED IRF440500V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS (on) IDIRF440 500V 0.85 8.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient … shapar pin codeWebParameter Max. Units VDS Drain- Source Voltage -30 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0 ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -6.4 A IDM Pulsed Drain Current † -50 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V TJ, … ponthir village hall hireWebDrain-sourge voltage 500V. Continuous drain current (at Tc 25deg) 4.5A. Download IRF430 datasheet from. General Electric Solid State. pdf. 167 kb. 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package. Others with the same file for datasheet: 2N6762, JANTX2N6762, JANTXV2N6762. shap approachWebIRF430-433/IRF830-833 MTM/MTP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V/500 V Description ... NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors. IRF430-433/IRF830-833 Electrical Characteristics (Tc = 25°C unless otherwise noted) ... ponthoeve